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Datasheet File OCR Text: |
SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES High Reliability. Small surface mounting type (SOT-23). 2 L E B BAS21 SILICON EPITAXIAL PLANAR DIODE L DIM A D B C D E G H J MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 3 A G H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 300 250 250 2 250* mW 300** 150 -55150 E E UNIT V C N P P K L M N P V mA A 1. NC 2. ANODE 3. CATHODE M K J 3 2 1 SOT-23 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm) Marking Type Name Lot No. H9 ELECTRICAL CHARACTERISTICS (Ta=25E CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time ) TEST CONDITION IF=150mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. TYP. MAX. 1.25 0.2 100 3 100 UNIT V i A pF nS SYMBOL VF IR(1) IR(2) CT trr 2009. 1. 23 Revision No : 1 1/2 BAS21 I F - VF 10 5 10 4 IR - VR 100 REVERSE CURRENT I R (nA) Ta=25 C Ta=25 C FORWARD CURRENT I F (A) 10 3 10 2 10 1 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 1200 10 1 0.1 0 50 100 150 200 250 300 FORWARD VOLTAGE VF (mV) REVERSE VOLTAGE VR (V) C T - VR TERMINAL CAPACITANCE C T (pF) 1.5 1.4 1.3 1.2 1.1 1.0 f=1MHz Ta=25 C 0 10 20 30 REVERSE VOLTAGE VR (V) 2009. 1. 23 Revision No : 1 2/2 |
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